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 01.08.28
Features * Up to 1.5 Gbps high speed operation * -5 V single power supply * Up to 40 mA p-p modulation current * Up to 50 mA bias current * Maximum bias current preset control
F0510203B
1.5Gbps Laser Diode Driver
With Input Bias Circuit
Applications * Laser diode driver of an optical transmitter circuit for SDH (STM4)
Functional Description The F0510203B is a high performance GaAs integrated laser diode driver for use in an optical transmitter circuit up to 1.5 Gbps NRZ data rate. The F0510203B typically specifies rise time and fall time of 100 psec (20% - 80%). It features single -5 V supply operation, 1 to 50 mA presettable bias current and up to 40 mA modulation current.
F0510203B
Absolute Maximum Ratings
1.5Gbps Laser Diode Driver
Ta = 25 C, unless specified
Parameter Supply Voltage Input Voltage Output Voltage Modulation Current Control Voltage Maximum Bias Current Setting Voltage Storage Temparature Ambient Operating Temparature Symbol VSS VIN1, VIN2 VOUT1, VOUT2 VM VB Tstg Ta Value VDD- 7 to VDD+0.5 VSS to VDD+0.5 VSS to VDD+0.5 VSS to VSS+1.3 VSS to VSS+1.7 -55 to +125 -40 to +85
Units V V V V V C C
Recommended Operating Conditions VDD= GND
Value Min. Supply Voltage Ambient Operating Temparature VSS Ta VDD-5.25 0 Typ. VDD-5 25 Max. VDD-4.75 85 V C
Parameter
Symbol
Units
1.5Gbps Laser Diode Driver
Electrical Characteristics
F0510203B
Ta =0 ~ 85 C, VSS = - 5.25 ~ -4.75 V, VDD =GND unless specified
Value Parameter Circuit Current (1) Input Voltage Input Current Modulation Current Bias Current Bias Current Setting Voltage(IM=20mA) LEAK Current Rise Time Fall Time Symbol ISS VIH VIL IIN1,IIN2 IMMAX IBMAX VM20 ILEAK tr tf VIN1 , VIN2 =-1.8V VM =VSS+1.3V, Ta =25 C VB =VSS+1.7V, Ta =25 C IM=20mA, VSS=-5V Ta=25 C VM=VSS +0.01V VB=VSS +0.1V RL = 25 20% - 80% RL = 25 20% - 80% TestConditions Min. VM =VB=VSS , without IM,IB Differential Mode -1.8 -80 40 50 VSS+0.73 100 100 -1.6 80 VSS+0.92 0. 9 150 150 V A mA mA V mA ps ps -1.0 Typ. 28 Max. 40 -0.8 mA V Units
F0510203B
Block Diagram
1.5Gbps Laser Diode Driver
GND VINR VIN VINB VINBR + -
OUT OUTB
OUTBIAS
VSS
VM
VSSM
VSSB
VB
Die Pad Description
VIN VINR VINB VINBR VSS VSSM VSSB VM VB OUT OUTB OUTBIAS GND Input Bias Voltage for Input Input Bias Voltage for Input Supply Voltage Supply Voltage Supply Voltage Modulation Current control Bias Current Control Output Output Bias Current for Laser GND
1.5Gbps Laser Diode Driver
Die Pad Assignments
F0510203B
(11)
(10)
(9)
(8)
(12)
(7)
(13) (1) (2) (3) (4) (5)
(6)
No. (1) (2) (3) (4) (5) (6) (7) (8) (9)
Symbol VIN VINR OUT OUTBIAS VB VSSB VSSM VM OUTB
Center Coordinates(m) (184,80) (470,80) (680,80) (880,80) (1180,80) (1310,305) (1310,585) (1180,810) (680,810)
No. (10) (11) (12) (13) O A
Symbol VINBR VINB VDD VSS
Center Coordinates(m) (470,810) (184,810) (80,585) (80,305) (0,0) (1390,890)
F0510203B
Test Circuits
1.5Gbps Laser Diode Driver
DC Source/ Monitor Unit
OUT OUTB OUTBIAS VIN1 VM
DC Source/ Monitor Unit
VIN2
DUT
VB
VM VSS
VSSB VSSM
Probing System with Temp. chuck
1.5Gbps Laser Diode Driver
Typical DC Characteristics (1)Switching Characteristics
F0510203B
IO (mA)
Modulation Current IM(mA)
80.00
8.000 /div
.0000 -1.800
.1000/div Input Voltage VIN1(V) (VSS=-5.0V, VM =-3.7V)
(v)
-8.000
(2)Modulation Current Control
IO (mA)
Modulation Current IM(mA)
80.00
8.000 /div
.0000 -5.000
.1500/div Control Voltage VM(V)
(v)
-3.500
(VSS=-5.0V, VIN1 =-1.7V, VIN2 =-0.9V)
F0510203B
(3)Bias Current Control
1.5Gbps Laser Diode Driver
IO (mA)
Modulation Current IM(mA)
80.00
8.000 /div
.0000 -5.000
.2000/div Control Voltage VB(V)
(v)
-3.000
(VSS=-5.0V, VIN1 , VIN2 , VM : no connect)
Electron Device Department


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